| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 540496 | Microelectronic Engineering | 2011 | 4 Pages |
Abstract
Low frequency noise (LFN) characterization was performed on the HfSiON gate stacks fabricated with the SiON interfacial layers (ILs) and a La cap layer. The LFN data identified N and La related defects located in the IL/HK region.
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Physical Sciences and Engineering
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Authors
C.D. Young, D. Veksler, S. Rumyantsev, J. Huang, H. Park, W. Taylor, M. Shur, G. Bersuker,