Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
540514 | Microelectronic Engineering | 2011 | 4 Pages |
Abstract
In this paper we present the investigation of high-k dielectrics in a metal–insulator–metal structure. We show the physical and electrical properties of ZrO2 and SrxZr(1−x)Oy grown through sputter deposition. Uncontrolled crystallization of ZrO2 during the growth into a mixture of different phases was observed. As a consequence, the k-value was suppressed. Stabilization of the amorphous phase of the as grown films could be achieved by the admixture of SrO. This enabled controlled crystallization into a single phase after performing post-deposition annealing. The k-value of the annealed SrxZr(1−x)Oy was determined to be 33.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slide
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
M. Grube, D. Martin, W.M. Weber, T. Mikolajick, H. Riechert,