| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 540522 | Microelectronic Engineering | 2011 | 4 Pages |
Amorphous Gd2O3 and Sc2O3 thin films were deposited on Si by high-pressure sputtering (HPS). In order to reduce the uncontrolled interfacial SiOx growth, firstly a metallic film of Gd or Sc was sputtered in pure Ar plasma. Subsequently, they were in situ plasma oxidized in an Ar/O2 atmosphere. For post-processing interfacial SiOx thickness reduction, three different top metal electrodes were studied: platinum, aluminum and titanium. For both dielectrics, it was found that Pt did not react with the films, while Al reacted with them forming an aluminate-like interface and, finally, Ti was effective in scavenging the SiO2 interface thickness without severely compromising gate dielectric leakage.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Sc2O3 and Gd2O3 films were deposited by High-pressure sputtering. ► MIS devices were fabricated with Al, Pt and Ti electrodes. ► Pt does not affect the dielectric quality. ► Al reacts with the high-k dielectric. ► Ti produces an interface scavenging effect.
