CHC degradation of strained devices based on SiON and high-k gate dielectric materials

A comparison between the Channel Hot-Carrier (CHC) degradation on strained pMOSFETs with SiGe source/drain (S/D) based on different gate dielectric materials, as SiON or HfSiON, has been done. The influence of the device channel orientation, channel length and temperature on the CHC damage has been studied.

Graphical abstractCHC degradation comparison between strained and unstrained devices based both on high-k and SiON as a gate dielectric. Strained ones always present worst performance.Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► CHC degradation is larger in strained devices in comparison with unstrained ones. ► The SiON based transistors always present larger CHC damage that the high-k based ones. ► Transistor channel length influences the CHC degradation in strained devices. ► CHC damage shows no channel orientation dependence in high-k based strained samples. ► An increase of the CHC damage of strained devices is observed with temperature.