Defect gap states on III–V semiconductor–oxide interfaces (invited)

Interfaces models of (1 0 0)GaAs and various high K oxides such as HfO2, Gd2O3 or Al2O3 are used to study the interfacial defects and mis-bonded sites which can introduce states into the semiconductor gap, and cause the Fermi level pinning observed in FETs.

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