Electrical and photovoltaic properties of an organic–inorganic heterojunction based on a BODIPY dye

An organic–inorganic heterojunction based on a BODIPY dyes has been produced by forming dye thin film on n–Si. The electrical parameters of the structure have been investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements. The ideality factor, the barrier height and the series resistance values of the diode have been calculated as 2.43, 0.84 eV, and about 1.3 kΩ, respectively. The diode behaves as a non–ideal diode because of the series resistance and interface layer. The barrier height value obtained from I–V measurement has been compared with one from C–V measurement. Moreover, it has been seen that the diode is highly sensitive to the light and the reverse bias current increases about 1 × 104 times at −1 V under 100 mW/cm2 and AM1.5 illumination condition. The short photocurrent density (Jsc) and the open circuit voltage (Voc), the fill factor (FF) and power conversion efficiency (η) have been determined as 3.78 mA/cm2, 327 mV, 0.28 and 0.48 %, respectively.