| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 540558 | Microelectronic Engineering | 2011 | 7 Pages |
The comparative studies of electrical and physical characteristics of HfLaON-gated metal–oxide-semiconductor (MOS) capacitors with various nitrogen concentration profiles (NCPs) were investigated. Various NCPs in HfLaON gate dielectrics were adjusted by Hf2La2O7 target sputtered in an ambient of modulated nitrogen flow. The related degradation mechanisms of various NCPs in HfLaON dielectrics have been investigated under various post-deposition annealing (PDA). The results indicate that by developing full nitrogen profile (FNP) incorporated into HfLaON dielectric enhances electrical characteristics, including oxide trap charge, interface trap density, and trap energy level. Detailed understand of current mechanisms of various NCPs incorporated into HfLaON dielectrics using current–voltage characteristics under various temperature measurements were investigated. Energy band diagram of MOS capacitor with Ta/HfLaON/SiO2/P-Si(1 0 0) structure was demonstrated by the measurement of Schottky barrier height and the optical band gaps.
