Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
540563 | Microelectronic Engineering | 2011 | 4 Pages |
Abstract
In this paper, we present a flip-chip 80-nm In0.7Ga0.3As MHEMT device on an alumina (Al2O3) substrate with very little decay on device RF performance up to 60 GHz. After package, the device exhibited high IDS = 435 mA/mm at VDS = 1.5 V, high gm = 930 mS/mm at VDS = 1.3 V, the measured gain was 7.5 dB and the minimum noise figure (NFmin) was 2.5 dB at 60 GHz. As compared to the bare chip, the packaged device exhibited very small degradation in performance. The result shows that with proper design of the matching circuits and packaging materials, the flip-chip technology can be used for discrete low noise FET package up to millimeter-wave range.
Related Topics
Physical Sciences and Engineering
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Authors
Chin-Te Wang, Chien-I Kuo, Heng-Tung Hsu, Edward Yi Chang, Li-Han Hsu, Wee-Chin Lim, Che-Yang Chiang, Szu-Ping Tsai, Guo-Wei Huang,