Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
540630 | Microelectronic Engineering | 2010 | 5 Pages |
Abstract
A new fabrication process for IGBT devices with reverse blocking capability (RB-IGBT) is presented in this paper. The trench isolation approach which provides the reverse blocking capability has been implemented using solid source as doping technique (Boron doping wafers), resulting in a low-cost process in both starting material and time-consuming aspects. The feasibility of the fabrication technique has been validated with the electrical measurements of the prototype devices.
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
M. Vellvehi, J.L. Gálvez, X. Perpiñà, X. Jordà, P. Godignon, J. Millán,