Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
540643 | Microelectronic Engineering | 2010 | 4 Pages |
Abstract
We report the electrical transport of the Si nanowires in a field-effect transistor (FET) configuration, which were synthesized from B-doped p-type Si(1 1 1) wafer by an aqueous electroless etching method based on the galvanic displacement of Si by the reduction of Ag+ ions on the wafer surface. The FET performance of the as-synthesized Si nanowires was investigated and compared with Ag-nanoparticles-removed Si nanowires. In addition, high-k HfO2 gate dielectric was applied to the Si nanowires FETs, leading to the enhanced performance such as higher drain current and lower subthreshold swing.
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Authors
Kyeong-Ju Moon, Ji-Hyuk Choi, Tae-Il Lee, Moon-Ho Ham, Wan-Joo Maeng, Inchan Hwang, Hyungjun Kim, Jae-Min Myoung,