Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
540675 | Microelectronic Engineering | 2008 | 4 Pages |
Abstract
The thermal and electrical stabilities of Cu contact on NiSi substrate with and without a Ta/TaN barrier stack in between were investigated. Four-point probe (FPP), X-ray diffraction (XRD), scanning electron microscopy (SEM), depth-profiling X-ray photoelectron spectroscopy (XPS), and Schottky barrier height (SBH) measurement were carried out to characterize the diffusion barrier properties. The SBH measurement provides a very sensitive method to characterize the diffusion barrier properties for the copper contact on NiSi/Si. The results show that the Ta/TaN stack can be both thermally and electrically stable after annealing at 450 °C for 30 min and it will have a potential application as a diffusion barrier for Cu contact on NiSi.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Mi Zhou, Ying Zhao, Wei Huang, Bao-Min Wang, Guo-Ping Ru, Yu-Long Jiang, Ran Liu, Xin-Ping Qu,