Damageless Cu chemical mechanical polishing for porous SiOC/Cu interconnects

Both chemical and mechanical damages to porous SiOC film should be minimized in the Cu-CMP (chemical mechanical polishing) process for the 32–45 nm node Cu interconnect process. This paper first discusses chemical damage that occurs during direct CMP on a porous SiOC film. We found that the k-value increase after direct CMP was caused by the surfactants added to the cleaning chemicals to suppress watermark generation on the hydrophobic SiOC film surface. The surfactants assisted water molecule diffusion into the pores by improving the wettability of the film surface. N2 annealing after direct CMP removed moisture inside the pores and restored the k-value increase. Second, the paper discusses low-pressure electro-CMP (e-CMP) technology that we developed to reduce mechanical stress on the porous SiOC film. A high removal rate and good planarization performance were obtained by optimizing the cathode area of the electro-cell and carbon material of the e-CMP pad.