Frequency and temperature dependent dielectric properties of Al/Si3N4/p-Si(1 0 0) MIS structure

The dielectric properties of Al/Si3N4/p-Si(1 0 0) MIS structure were studied from the C–V and G–V measurements in the frequency range of 1 kHz to 1 MHz and temperature range of 80–300 K. Experimental results shows that the ε′ and ε″ are found to decrease with increasing frequency while the value of ε′ and ε″ increase with increasing temperature, especially, above 160 K. As typical values, the dielectric constant ε′ and dielectric loss ε″ have the values of 7.49, 1.03 at 1 kHz, and only 0.9, 0.02 at 1 MHz, respectively. The ac electrical conductivity (σac) increases with both increasing frequency and temperature. The activation energy of 24 meV was calculated from Arrhenius plot at 1 MHz. The results indicate that the interfacial polarization can be more easily occurred at low frequencies and high temperatures.