| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 540895 | Microelectronic Engineering | 2006 | 4 Pages |
Abstract
A new gas jet Z-pinch extreme ultraviolet (EUV) light source having double gas jet electrodes has been developed. It has two nozzles and two diffusers. The EUV emission is collected from the side of Xe pinch plasma, which is generated in a gap between the inner nozzle and corresponding diffuser. A cylindrical shell of He gas curtain produced by the outer nozzle is specially designed for shielding the debris and suppressing the inner gas expansion. We have estimated EUV energy of 1.22 mJ/sr/pulse for a 2% bandwidth at 13.5 nm in the presence of the gas curtain. The estimated diameter and length of EUV source in FWHM are 0.07 mm and 0.34 mm, respectively, whereas the same in FW 1/e2 are 0.15 mm and 1.2 mm, respectively.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Inho Song, Yasunori Kobayashi, Toshiro Sakamoto, Smruti R. Mohanty, Masato Watanabe, Akitoshi Okino, Toru Kawamura, Koichi Yasuoka, Kazuhiko Horioka, Eiki Hotta,