| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 540905 | Microelectronic Engineering | 2006 | 4 Pages |
Abstract
A method is presented for the fabrication of three-dimensional (3D) structures formed in hydrogen silsequioxane (HSQ) by a process of multiple low energy electron beam exposures with a single development step. Structures have been produced consisting of multiple layers of dielectric rods with widths and heights of 150 nm and a separation of 1μm in the horizontal plane and 360 nm in the vertical direction.
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Physical Sciences and Engineering
Computer Science
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Authors
Euan J. Boyd, Richard J. Blaikie,