Possibility to form an ultrahigh packed fine pit and dot arrays for future storage using EB writing

Possibility of very fine bit arrays formation for an ultrahigh density optical and magnetic recordings has been researched using electron beam (EB) writing with a high resolution scanning electron microscope (SEM), a writing controller and positive and negative electron resists. As experimental results, calixarene negative EB resist is very suitable to form an ultrahigh packed bit arrays pattern. We obtained extremely fine dot arrays with a diameter of <15 nm, and both bit pitch (BP) and track pitch (TP) of <30 nm. The writing pattern promises to open trillion bits/in.2 era.