Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
540932 | Microelectronic Engineering | 2006 | 4 Pages |
Abstract
Sets of approximate equations that describe the resist flow under a nanoimprint lithography stamp are derived from 3D Navier–Stokes equations. Special finite-difference schemes are built. These schemes permit to apply by modeling a reasonable coarse grid. The obtained numerical model provides the calculation of imprinting pressures and velocities under several loading regimes: constant imprint velocity or constant applied force. Comparisons with experimental data result in a satisfying qualitative agreement. The analysis of these results led to the conclusion that quantitative correspondence may be achieved by further taking into account the deformation of the stamp.
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Authors
V. Sirotkin, A. Svintsov, S. Zaitsev, H. Schift,