| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 541131 | Microelectronic Engineering | 2016 | 6 Pages |
•Dielectric charging is assessed in MEMS switches with substrate interference.•A new method is proposed to investigate dielectric charging.•Assessment separates the contribution of the substrate network.•The method has been applied to monitor the charging build-up during device stress.
The paper presents a new method to determine and monitor the surface charge density of dielectric film in capacitive MEMS switches which experience a significant interference from substrate parasitic MOS capacitors coupling. The method is based on the analysis of composite MEMS device and bridge-less back-to-back substrate MOS capacitors. The difference of the derivatives of the two device C-V characteristics allows the calculation of dielectric film charge density. The method has been applied to monitor the charging build-up during device stress.
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