Article ID Journal Published Year Pages File Type
541139 Microelectronic Engineering 2016 5 Pages PDF
Abstract

•Direct picosecond laser irradiation on multilayer graphene was discussed.•Multilayer graphene was prepared by roller imprinting process.•Optimal ablation was performed by ultraviolet picosecond laser pulses.•Characterization of ablated multilayer graphene was investigated.

This paper presents an approach that involves directly patterning multilayer graphene on a glass substrate by using ultraviolet picosecond (PS) laser irradiation. The PS laser is ultrafast, with a pulse duration of 15 ps, and can be operated at a wavelength of 355 nm. In this study, the multiple pulse ablation threshold fluence for patterning multilayer graphene was 5.2 J/cm2, with a pulse repetition rate of 200 kHz and at a fixed scanning speed of 250 mm/s. The effect of laser parameters on the width, depth, and quality of patterning was explored. To investigate laser-nonablated and laser-ablated multilayer graphene, the characteristics of graphene thin film were measured using Raman, transmittance, and electrical analyses. The experimental results revealed that the PS laser is a promising and competitive tool for ablating multiple layers to several layers of graphene thin films and even for completely removing graphene thin-film layers. The PS laser technique can be useful in developing graphene-based devices. Moreover, this approach has the potential for industrial applications.

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