| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 541178 | Microelectronic Engineering | 2016 | 4 Pages |
•ZnO–Ru thin films are prepared using a sol–gel and spin coating method.•The surface morphology of the ZnO–Ru films that are prepared from acid precursors is smooth and continuous.•The surface morphology of the ZnO–Ru films that are prepared from basic precursors is rugged.•The optical energy band gap is a function of the Ru-doping concentration and the annealing temperature.•An acidic or alkaline pH for the precursors of ZnO–Ru films affects the TFT performance.
ZnO–Ru thin films were prepared using a sol–gel spin coating method. We investigated the effects of the Ru-doping concentration, the pH value of precursor and the annealing temperature on the characteristics of the ZnO–Ru thin films. The crystallinity of ZnO–Ru films decreases as the Ru-concentration increases. The surface morphology of the ZnO–Ru films is also related to the pH of the precursors. The optical energy band gap is a function of Ru-doping concentration and the annealing temperature. The correlations among the Zn/Ru ratio, the pH value of the pre-solutions, the annealing temperature and the characteristics of ZnO–Ru films are derived. In addition to the material properties, the application of ZnO–Ru films as a channel layer in thin film transistors is also discussed.
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