| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 541285 | Microelectronic Engineering | 2014 | 5 Pages |
Abstract
•Thicker Al seed layer can enhance EM lifetime better.•Thicker Al seed layer can improve SM performance better.•Thicker Al seed layer brings more SM negative resistance shift.
Effect of alloy seed on electromigration (EM) and stress migration (SM) has been analyzed based on Cu-based, dual-damascene technologies. It is found that the thickness of aluminium (Al) seed layer has strong impact on metal resistance, EM lifetime and SM performance. Thicker Al seed layer can induce higher metal resistance, improve EM lifetime better and bring more apparent negative shift of resistance during SM.
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
XiangFu Zhao, Jeff Wu, Venson Chang,