| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 541315 | Microelectronic Engineering | 2014 | 7 Pages |
•EM & SM compact modeling requires knowledge of degradation kinetics.•Across-die distribution of residual stress is required for accurate SM & EM assessments.•Methodology for simulating across-die distribution of residual stress is proposed.•Analytical formulation for the void nucleation time is derived.
Simulation flow for the die-scale assessment of interconnect stress-migration (SM) and electromigration (EM) with an accounted variation of residual stress was developed. Two complimentary methodologies based on finite-element sub-modeling and compact modeling were proposed. A novel EM and SM model which takes into account a vacancy exchange between grain boundaries and grain interior has demonstrated a capability of predicting times for void nucleation at different test conditions while avoiding unreliable assumptions used in the Black’s equation-based assessment.
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