| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 541371 | Microelectronic Engineering | 2011 | 8 Pages |
Abstract
This paper summarizes and analyzes some of our previous works on the advanced gate stacks for CMOS transistors focused on the following two topics: 1. Frequency dependence of Dynamic Bias Temperature Instability (DBTI) and the transistor degradation mechanism, 2. A novel way for metal gate Effective Work Function (EWF) modulation by incorporation of lanthanum elements in HfO2 gate dielectric.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Ming-Fu Li, X.P. Wang, C. Shen, J.J. Yang, J.D. Chen, H.Y. Yu, Chunxiang Zhu, Daming Huang,