Electroplating of Cu(Ag) thin films for interconnect applications

Electromigration effects in interconnect metallizations cause a need for materials with superior resistance against electromigration failure but with adequate electrical properties. In principle, Cu(Ag) alloys are potential candidates to become an interconnect material of the next generation of microelectronic devices. Therefore, in the following paper the electroplating of such Cu(Ag) alloys from a sulfuric acid electrolyte solution with varying silver content in a home built deposition tool is presented. Besides the general deposition characteristics, the growth mode of the films and the deposition into trenches will be discussed. The investigations show that Cu(Ag) alloys can be deposited with adequate homogeneity of the film thickness by electroplating. Furthermore, the electrical resistivity is low enough to assure a use of these films for interconnect applications. However, distinct island growth and insufficient trench filling capabilities lead to the fact that the additive composition needs to be optimized for Cu(Ag) thin film electroplating.