Application of the hybrid Hopkins–Abbe method in full-chip OPC

The hybrid Hopkins–Abbe method is presented and shown to resolve the problem of the traditional Hopkins theory, namely the requirement for constant mask diffraction efficiencies. Simulation of electromagnetic scattering from the mask that takes into account the oblique angles of incidence from the illumination is performed by application of the domain decomposition method that is extended for offaxis illumination. Examples of 45 nm and 32 nm lines and spaces through pitch and through focus are presented to demonstrate the validity and accuracy of the hybrid Hopkins–Abbe method. The results obtained are in excellent agreement with a rigorous and independent (third party) simulator.