Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
541626 | Microelectronic Engineering | 2009 | 4 Pages |
Abstract
AlGaN/GaN high electron mobility transistors (HEMTs) with 0.75 μm gate-length and incorporated C-doped GaN buffer layers have been exposed to gamma radiation. The devices have been irradiated to cumulative doses up to 107 rad. The effect of gamma irradiation on the direct current (DC) and low-frequency noise properties of these devices have been investigated in reference to the unexposed device. The DC and noise characteristics show deteriorating device performance upon the gamma exposure. However, some DC parameters, such as transconductance, tended to recover after the irradiation. The gate leakage current and low-frequency noise power spectra indicate this trend even couple of months after the irradiation.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
S. Jha, Emil V. Jelenković, M.M. Pejović, G.S. Ristić, M. Pejović, K.Y. Tong, C. Surya, I. Bello, W.J. Zhang,