Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
541665 | Microelectronic Engineering | 2008 | 4 Pages |
Abstract
We have identically prepared as many as eight Ni/n-GaAs/In Schottky barrier diodes (SBDs) using an n-type GaAs substrate with a doping density of about 7.3 × 1015 cm−3. The thermal stability of the Ni/n-GaAs/In Schottky diodes has been investigated by means of current–voltage (I–V) techniques after annealed for 1 min in N2 atmosphere from 200 to 700 °C. For Ni/n-GaAs/In SBDs, the Schottky barrier height Φb and ideality factor n values range from 0.853 ± 0.012 eV and 1.061 ± 0.007 (for as-deposited sample) to 0.785 ± 0.002 eV and 1.209 ± 0.005 (for 600 °C annealing). The ideality factor values remained about unchanged up to 400 °C annealing. The I–V characteristics of the devices deteriorated at 700 °C annealing.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
H. Doğan, N. Yıldırım, A. Turut,