Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
541669 | Microelectronic Engineering | 2008 | 7 Pages |
Growth of silver films was studied by supercritical fluid deposition (SCFD) using H2 and acetone as reducing agents for (1,5-cyclooctadiene)(hexafluoroacetylacetonato)silver(I) in supercritical CO2 (scCO2). H2 reduction did not yield continuous Ag films, whereas continuous films were deposited on Ru substrates by acetone-assisted reduction of 0.006–0.03 mol% precursor in the temperature range of 150–250 °C. Surface qualities of the Ag films were effectively improved by decreasing water content in acetone reagent, as well as reducing acetone and precursor concentrations in scCO2. Ultimately, a 50 nm-thick film with shiny surface was obtained in optimized conditions. A possible mechanism for acetone reduction of Ag precursor on Ru surface was also proposed.