Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
541670 | Microelectronic Engineering | 2008 | 7 Pages |
Abstract
We have studied the chemical mechanical polishing (CMP) characteristics of mixed abrasive slurry (MAS) retreated by adding of zirconium oxide (ZrO2) abrasives within 1:10 diluted silica slurry. These mixed abrasives in the MAS are evaluated with respect to their particle size distribution, surface morphology, and CMP performance such as removal rate and non-uniformity. As an experimental result, the comparable slurry characteristics when compared to the original silica slurry were obtained from the viewpoint of high removal rate and low non-uniformity for excellent CMP performance. Therefore, our proposed ZrO2-MAS can be useful to save on the high cost of slurry consumption since we used a 1:10 diluted silica slurry.
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Authors
Sung-Woo Park, Yong-Jin Seo, Woo-Sun Lee,