| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 541687 | Microelectronic Engineering | 2008 | 4 Pages |
Abstract
We demonstrate low-trap-density HfON film made by the molecular-atomic deposition (MAD) technique, which is an Ar/N2 plasma jet assisted physical vapor deposition process. This high-k HfON can be deposited on top of the nearly trap-free MAD-Si3N4 to form a single-side crested tunnel barrier. The Al/(HfON–Si3N4)/Si capacitor structure with HfON/Si3N4 stack as the tunnel barrier demonstrates steeper I–V slope than that of a single layer SiO2 with the same EOT, and is readily applicable to improve the programming speed and data retention of flash memories.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Yanxiang Liu, Sun Il Shim, X.W. Wang, Lurng-Shehng Lee, Ming-Jinn Tsai, T.P. Ma,