| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 541841 | Microelectronic Engineering | 2006 | 4 Pages |
Abstract
The growth of tungsten nitride carbide, WNxCy, films obtained by atomic layer deposition (ALD), using tri-ethylboron, tungsten hexafluoride and ammonia precursors is determined by the density and type of substrate reactive sites. During an initial period, referred to as transient regime, the SiC oxidation state and the tri-ethylboron pulse time determine the amount of metal deposited. WNxCy growth on SiC is similar to that on PECVD SiO2 explained by decomposition of the tri-ethylboron precursor, giving rise to a carbon rich WNxCy-oxide interface.
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Authors
A. Martin Hoyas, C.M. Whelan, J. Schuhmacher, K. Maex, J.P. Celis,