| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 541879 | Microelectronic Engineering | 2006 | 4 Pages |
Abstract
NiPt (10% Pt) and Pt were investigated as alternatives to Ni for contact formation to SiGe source/drain. The germanosilicide phase formation and morphology were studied by means of sheet resistance measurements, XRD (X-ray diffraction) analysis and SEM (scanning electron microscopy) inspection. From isochronal and isothermal anneals it is found that NiPt- and Pt-germanosilicide have better thermal stability compared to Ni-germanosilicide. NiPt-germanosilicide degrades morphologically, while still in the monogermanosilicide phase.
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Hardware and Architecture
Authors
A. Lauwers, M.J.H. van Dal, P. Verheyen, O. Chamirian, C. Demeurisse, S. Mertens, C. Vrancken, K. Verheyden, K. Funk, J.A. Kittl,