Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
541902 | Microelectronic Engineering | 2006 | 5 Pages |
Abstract
In this paper we present the AC impedance analysis of Au/porous silicon contacts in order to investigate their conduction mechanisms. The porous silicon layer was obtained by electrochemical etching of the p-Si wafer. The measurements were made between 5 Hz and 10 MHz, at room temperature and in the DC range from 0 to 2 V. An electrical equivalent circuit was used to fit the experimental data. The voltage dependence of the fitting parameters led to a deeper understanding of the physical parameters that limit the conduction mechanisms of the Au/PS contacts.
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Authors
F. Fonthal, T. Trifonov, A. Rodriguez, L.F. Marsal, J. Pallarès,