| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 542121 | Microelectronic Engineering | 2015 | 4 Pages |
•ArF Talbot lithography is proposed for submicron pattern transfer.•Effect of a defect on the pattern size in simulation and experiment is discussed.•Talbot lithography is more resistant to mask defects than reduction lithography.•The focal depth is more than 1 micron even if a defective mask is used.
We conduct a simulation and experiment to investigate the effect of a defect on the pattern size around the defect in ArF Talbot lithography proposed for submicron pattern transfer. We confirm that the focal depth is more than 1 micron even if a defective mask is used. Talbot lithography with a 1:1 mask is more resistant than reduction projection lithography against the effects of mask defects.
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