Nanometer scale patterning of GaN using nanoimprint lithography and Inductively Coupled Plasma etching

•Three types of GaN: MOVPE-grown, MBE-grown, ammonothermal-grown were used in the experiment.•Master stamp used in the experiment consisted of glass covered with metallic layer.•The pattern of the master stamp was fabricated by FIB.•Soft stamps were replicated from master stamps.•Triple mask was used for imprinted pattern transfer into GaN.

In this paper results on GaN patterning using nanoimprint technology are presented. Direct method of stamp fabrication based on FIB etching was used. Stamp with critical dimensions of 50 nm was achieved. Two kinds of polymer materials were used for master stamp replication. Influence of etching parameters using chlorine based plasma on GaN etch rate and surface roughness was discussed. Triple mask consisting of TU2 resist, Cr and SiO2 used for NIL-generated pattern transfer into GaN allowed successful patterning.

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