| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 542430 | Microelectronic Engineering | 2014 | 6 Pages |
•Luminescent ZnO nanoparticle (NP) layers deposition on a top of a Si solar cell.•Simulated EQE is not influenced by the presence of the ZnO NP layer.•Measured EQE for Si solar cell shows the AR effect of ZnO NP top layer.•No down-shifting effect contributing to the EQE in Si solar cell.•Simulated I–V show higher efficiency in GIGS and CdTe solar cell with ZnO NP layer.
A down-shifting material can generate one low-energy photon for every one incident high-energy photon. When such a material is placed on the front side of a photovoltaic solar cell, it has the potential to enhance the overall efficiency of the PV device by emitting photons in the spectral range where the solar cell efficiency is higher. This paper examines the application of ZnO nanoparticles as a luminescent down-shifting layer (LDSL) on the Si-based, CIGS and CdTe photovoltaic devices. The experimental results measured on a Si-based photovoltaic cell with a top luminescent down-shifting layer are analyzed.Theoretical solar cells performances were simulated using the SCAPS program. The elaborated electrical and optical models take into account the photoluminescence of the ZnO nanoparticle top layer. The obtained external quantum efficiency (EQE) and I–V characteristics were analyzed in order to estimate the impact of the photoluminescent down-shifting layer on the final efficiency of the Si, CIGS and CdTe solar cells. Contrary to the EQE curves, the I–V characteristics of the CIGS and CdTe solar cells are strongly affected by the presence of the photoluminescent down-shifting layer on their top.
Graphical abstractI–V characteristics of various solar cells with a ZnO bulk layer or ZnO nanoparticle layer on the front side.Figure optionsDownload full-size imageDownload as PowerPoint slide
