| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 542599 | Microelectronic Engineering | 2014 | 4 Pages |
•Cu/a-SiC/Au non-volatile resistive memories were fabricated and characterized.•Co-existence of bipolar and unipolar resistive switching behavior was reported.•Ultrahigh ON/OFF switching ratios in the range of 108–109 were reported.•Excellent state retention up to 10 years was also demonstrated.
Amorphous SiC based resistive memory Cu/a-SiC/Au devices were fabricated and their resistive switching characteristics investigated. Co-existence of bipolar and unipolar behavior has been observed with ON/OFF current ratio in the range of 108–109. These high ratios are due to the conduction in the OFF state being dominated by the Schottky barrier between the Au and SiC. ON/OFF ratios exceeding 107 over 10 years were predicted from retention characterization. The unique performance combination of the extremely high ON/OFF ratio, coexistence of bipolar and unipolar switching modes as well as excellent stability and retention suggest significant application potentials of Cu/a-SiC/Au RM devices.
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