| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 542612 | Microelectronic Engineering | 2014 | 4 Pages |
•MEMS switches integrated in a CMOS technology using Back-End layers (based on aluminum).•Easy and reproducible fabrication process.•Abrupt behavior (5 mV/decade), good ION/IOFF ratio (1x103) and good reliability (more than 20 cycles).
In this work MEMS switches have been developed using a standard CMOS technology (AMS 0.35 μm technology). With this purpose the back-end metallization layers (based on aluminum) have been used in two different configurations: stack of metals and via layers or M4 upper metal layer. After the in-house post-processing based on wet etching releasing process, they have been characterized and electrically measured, showing good reliability (more than 20 cycles, in both approaches) abrupt behavior (24 mV/decade M4 configuration and 5 mV/decade stack approach) and good ION/IOFF ratio (1x102 M4 configuration and 1x103 stack switch).
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