Inverted nanopyramid texturing for silicon solar cells using interference lithography

•Inverted nanopyramids were fabricated by interference lithography and KOH etching.•The reflectivity of inverted nanopyramids below 10% over visible region.•A 67% increase in efficiency was achieved by nanopyramid texturing.

We report on a maskless and scalable technique for fabricating nano-scale inverted pyramid structures suitable for light management in crystalline silicon solar cells. This technique utilizes interference lithography and subsequent combined dry and KOH wet pattern transfer etching techniques. The inverted nanopyramid structures suppress the total reflection at normal incidence to below 10% over the entire visible range. The overall efficiency of the solar cell has been increased by 67% with the inverted nanopyramid texturing. The standard dual MgF2/ZnS anti-reflection coating further enhanced the overall efficiency by 5.79%.

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