TCAD models of the temperature and doping dependence of the bandgap and low field carrier mobility in 4H-SiC

•Correct TCAD simulation models for 4H-SiC carrier mobility.•Correct TCAD simulation models for 4H-SiC energy band gap.•Comparison with multiple fundamental theoretical and experimental studies.

A systematic study of the usually employed models of 4H-SiC bandgap energy value and carrier mobility in TCAD simulations has been performed. Theoretically calculated and experimentally determined values of these parameters are compared with the corresponding models used in TCAD simulations of different research groups as well as of related software developer SILVACO. Comparisons between physical and established semi-empirical models have been made and deviations from the experimental values are observed in many reported studies. Based on this analysis, the best fitting models and the corresponding coefficients are proposed.

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