| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 542864 | Microelectronic Engineering | 2013 | 4 Pages |
The barrier height modulation of Ni-silicided Schottky contacts fabricated on n-Si(1 0 0), n-Si(1 1 0), p-Si(1 0 0) and p-Si(1 1 0) substrates using an antimony (Sb) interlayer was investigated. The Sb layer was directly sputter-deposited on Si substrate followed by the regular Ni deposition and rapid thermal annealing. It is revealed that NiSi can still form even with the Sb interlayer and the effective Schottky barrier height can be modulated on all kinds of Si substrates. The difference between Si(1 0 0) and Si(1 1 0) samples is attributed to the rougher NiSi/Si(1 1 0) interface, which results in a larger leakage current.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Ni/Sb/Si stacks were fabricated by sputter-deposition on Si substrate with different orientation and doping type. ► Sb effectively modified the Schottcky barrier height of NiSi/Si. ► Better electrical characteristic was found on Si(1 0 0) than on Si(1 1 0) substrate.
