| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 542865 | Microelectronic Engineering | 2013 | 4 Pages |
In-situ X-ray diffraction was used to determine CoSi2 growth kinetics from 100 nm CoSi films. In this work, we discuss about an unexpectedly slow reaction rate that is observed at the end of CoSi2 formation. A 1D model has also been developed from these experiments in order to reproduce the sequential growth of cobalt silicides and the end of the reaction experimentally observed in this study.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► We investigate CoSi2 kinetics using in-situ XRD. ► A TiN capping layer decreases the CoSi2 formation rate. ► The CoSi2 texture of our films is random. ► CoSi2 formation rate decrease at the end of reaction. ► We develop a 1D model of the CoSi2 formation at the end of reaction.
