| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 542881 | Microelectronic Engineering | 2013 | 5 Pages |
Abstract
The moisture absorption impacts on electromigration (EM) and time dependent dielectric breakdown (TDDB) were investigated in Cu/low-k interconnects that is adopting CuAl alloy seed technique. A long queue time (Q-time) has a serious impact on kinetics of both EM and TDDB characteristics. The moisture absorption causes the loss of alloy effects on EM lifetime improvements. The ultra-thin SiN (UT-SiN) remarkably suppresses the moisture absorption impacts due to Q-time. It also inhibits kinetics degradations of EM and TDDB that depend on the moisture absorption to low-k.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slide
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
H. Tsuchiya, S. Yokogawa, H. Kunishima, T. Kuwajima, T. Usami, Y. Miura, K. Ohto, K. Fujii, M. Sakurai,