| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 542945 | Microelectronic Engineering | 2013 | 6 Pages |
In this work, we present a two-dimensional finite element (FE) model for laser beam-induced low-resistance lateral interconnects. We refer to these links as “Microbridges”. The model allowed designers using different geometric parameters (interline spacing and the width-to-height ratio of metal lines) and metal-dielectric combination (Al/SiO2) to optimize the design structure. The results of the FE analysis are consistent with the experimental results. An optimal design diagram for the Al/SiO2 system is created to provide the best dimensional combinations exhibiting the widest process window and the best production yield.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► We optimize the design of microbridges for low-resistance lateral interconnects (Al/SiO2) in ICs. ► We created a finite element (FE) model to simulate the forming of microbridges. ► The simulation results of FE analysis are consistent with the experimental ones. ► We created an optimal design diagram according to the simulation and experiments. ► The diagram provides the best structure design of microbridges.
