| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 542957 | Microelectronic Engineering | 2013 | 7 Pages |
A silicon-photodiode detector can be used to sense the position of the electron beam in a scanning-electron microscope. In order to validate the implementation of a electron beam drift detector, a silicon photodiode was constructed with a low profile and small working distance. The performance in detecting the drift of the electron beam over time was analyzed. It was also shown that a back scattered-electron image can be created with electron scanning, which allows the development of highly sensitive in situ beam position feedback in the electron-beam direct-write lithography system.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Silicon-photodiode detector for in-situ beam position sensing in an scanning electron microscope (SEM). ► Applying image processing technique to the backscattered-electron image to reach nanometer resolution. ► The performance in detecting the drift of the electron beam over time was analyzed. ► This detection mechanism is useful for beam position feedback in the electron-beam direct-write lithography system.
