A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics

This paper presents a comprehensive study on channel hot-carrier (CHC) degradation in short channel MOSFETs with high-k dielectric. Different reliability scenarios are analyzed, i.e., temperature influence, impact of high ID and dynamic operation conditions. To explain the CHC damage behavior in short channel devices, we divide the total CHC degradation in two components: the classical CHC damage located at drain side and the degradation produced by the voltage drop over the gate dielectric, which can be considered as bias temperature instability (BTI).

Graphical abstractThe channel hot-carrier aging is divided in two independent components: CHC at the drain side and BTI along the inversion channel. This split up explains the overall device performance in front of several reliability environments.Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► We confirm that degradation during CHC stress is caused by two components. ► At high VG BTI dominates and the CHC degradation does not follow the LEM. ► For AC CHC stress, at VG = VD CHC condition a quasi-static behavior is observed.