| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 543087 | Microelectronic Engineering | 2010 | 6 Pages |
An Au/Orcein/p-Si/Al device was fabricated and the current–voltage measurements of the devices showed diode characteristics. Then the current–voltage (I–V), capacitance–voltage (C–V) and capacitance–frequency (C–f) characteristics of the device were investigated at room temperature. Some junction parameters of the device such as ideality factor, barrier height, and series resistance were determined from I–V and C–V characteristics. The ideality factor of 2.48 and barrier height of 0.70 eV were calculated using I–V characteristics. It has been seen that the Orcein layer increases the effective barrier height of the structure since this layer creates the physical barrier between the Au and the p-Si. The interface state density Nss were determined from the I–V plots. The capacitance measurements were determined as a function of voltage and frequency. It was seen that the values of capacitance have modified with bias and frequency.
