High density, low leakage Back-End 3D capacitors for mixed signals applications

ITRS 2018 compliant capacitors have been developed with low-cost anodic Ta2O5 material. High capacitance values and very low leakages have been obtained on low thermal budget capacitors fabricated with a CMOS-compatible process. High densities in the order of 10 fF/μm2 and very low leakages down to 10−7 A/cm2 at 10 V have been measured electrically. All these features, combined with a high breakdown voltage superior to 37 V and linearity coefficient down to 82 ppm/V, make such capacitors great candidates for both analog precision and decoupling applications.