| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 543144 | Microelectronic Engineering | 2010 | 7 Pages |
Abstract
The subject of this paper is the extension of the simulation tool T2 for the application to Reactive Physical Vapor Deposition. The implemented models are briefly described and applied to the deposition of TaNx barriers. The influence of the nitrogen flow and the substrate bias on the deposition rate, the thickness uniformity, and the film composition is discussed.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
H. Wolf, R. Streiter, M. Friedemann, P. Belsky, O. Bakaeva, T. Letz, T. Gessner,