Analysis of electronic parameters and interface states of boron dispersed triethanolamine/p-Si structure by AFM, I–V, C–V–f and G/ω–V–f techniques

The electronic parameters and interface state properties of boron dispersed triethanolamine/p-Si structure have been investigated by atomic force microscopy, I–V, C–V–f and G/ω–V–f techniques. The surface topography and phase image of the TEA-B film deposited onto p-Si substrate were analyzed by atomic force microscopy. The atomic force microscopy results show a homogenous distribution of boron particles in triethanolamine film. The electronic parameters (barrier height, ideality factor and average series resistance) obtained from I–V characteristics of the diode are 0.81 eV, 2.07 and 5.04 kΩ, respectively. The interface state density of the diode was found to be 2.54 × 1010 eV− cm−2 under Vg = 0. The obtained Dit values obtained from C–V and G/ω measurements are in agreement with each other. The profile of series resistance dependent on voltage and frequency confirms the presence of interface states in boron dispersed triethanolamine/p-Si structure. It is evaluated that the boron dispersed triethanolamine controls the electronic parameters and interface properties of conventional Al/p-Si diode.